Method for manufacturing dielectric thin film capacitor

Details Method for manufacturing dielectric thin film capacitor Method for manufacturing dielectric thin film capacitor

2007-05-29

2007-05-29

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S075000

Reexamination Certificate

active

10933309

ABSTRACT:
A method for manufacturing a dielectric thin film capacitor of the present invention includes the steps of coating a liquid raw material on a substrate and performing a first heat treatment to form an adhesive layer, forming a lower electrode on the adhesive layer, coating a liquid raw material on the lower electrode and performing a second heat treatment to form a dielectric thin film by crystallization, forming an upper electrode on the dielectric thin film, and performing a third heat treatment at a temperature higher than those of the first and second heat treatments. The adhesive layer and the dielectric thin film are formed by using materials having the same composition system or using the same material.

REFERENCES:
patent: 5508226 (1996-04-01), Ito et al.
patent: 6815221 (2004-11-01), Kim et al.
patent: 2003/0096472 (2003-05-01), Kang et al.
patent: 2004/0028952 (2004-02-01), Cartier et al.
patent: 2004/0259383 (2004-12-01), Choi et al.
patent: 08-078636 (1996-03-01), None

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