Method for manufacturing dielectric capacitor, dielectric memory

Details Method for manufacturing dielectric capacitor, dielectric memory Method for manufacturing dielectric capacitor, dielectric memory

1997-12-16

2000-03-07

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438466, H01L 218242

Patent

active

060339535

ABSTRACT:
A dielectric capacitor is provided which has a reduced leakage current. The surface of a first electrode (38) of the capacitor is electropolished and a dielectric film (40) and a second electrode (37) are successively laminated on it. The convex parts pointed end (38a) existing on the surface of the first electrode is very finely polished uniformly by dissolving according to electropolishing, a spherical curved surface in which the radius of curvature has been enlarged is formed, and the surface of the first electrode is flattened. Therefore, concentration of electrolysis can be prevented during the operation at the interface of the first electrode and the dielectric film, and the leakage current can be reduced considerably.

REFERENCES:
patent: 5665628 (1997-09-01), Summerfelt
patent: 5759903 (1998-06-01), Lehmann et al.

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