Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2001-12-28
2009-06-30
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S261000, C257SE21422, C257SE21683
Reexamination Certificate
active
07553724
ABSTRACT:
The present invention relates to a method manufacturing a code address memory (CAM) cell. The present invention uses a dielectric film in which an oxide film and a nitride film between a floating gate and a control gate in a flash memory cell are stacked as a gate insulating film between a semiconductor substrate and a gate in the CAM cell. Therefore, the present invention can reduce the area of a peripheral circuit region and stably secure repaired data since the CAM cell can be stably driven at a low operating voltage and additional boosting circuit is thus not required.
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Cho Min Kuck
Jung Sung Mun
Kim Jum Soo
Lee Young Bok
Hynix / Semiconductor Inc.
Lowe Hauptman & Ham & Berner, LLP
Nguyen Khiem D.
Smith Matthew
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