Method for manufacturing capacitor of semiconductor device

Details Method for manufacturing capacitor of semiconductor device Method for manufacturing capacitor of semiconductor device

2005-09-06

2005-09-06

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S301000

Reexamination Certificate

active

06939759

ABSTRACT:
The present invention discloses method for manufacturing capacitor of semiconductor device wherein a bonding layer is exposed via etch-back process without using a contact hole mask. In accordance with the method of the present invention, an interlayer insulating film, a bonding layer and a hard mask layer are sequentially formed on a semiconductor substrate. The hard mask layer, the bonding layer and the interlayer insulating film are then etched to form a storage electrode contact hole. The storage electrode contact hole is partially filled to form a storage electrode contact plug and the remaining portion is filled with a barrier metal layer pattern. The hard mask layer is then removed and a storage electrode contacting the barrier metal layer pattern is then formed on the bonding layer.

REFERENCES:
patent: 5940703 (1999-08-01), Hong
patent: 6274899 (2001-08-01), Melnick et al.

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