Method for manufacturing capacitor of semiconductor device

Details Method for manufacturing capacitor of semiconductor device Method for manufacturing capacitor of semiconductor device

2011-04-12

2011-04-12

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C257SE27048, C257SE21008

Reexamination Certificate

active

07923324

ABSTRACT:
A method for manufacturing a capacitor of a semiconductor device includes forming a lower metal layer over a substrate, forming a dielectric layer over the lower metal layer, forming an upper metal layer over the dielectric layer, forming an upper electrode and a dielectric layer pattern by performing a reactive ion etching process with respect to the upper metal layer using the dielectric layer as an etch stop layer, and exposing a top surface of the lower metal layer, and performing a chemical down-stream etch (CDE) process to remove a by-product of a sidewall of the upper electrode.

REFERENCES:
patent: 2002/0192897 (2002-12-01), Molloy et al.
patent: 2005/0227378 (2005-10-01), Moise et al.
patent: 10-2005-0122634 (2005-12-01), None
patent: 10-2006-0069593 (2006-06-01), None
patent: 10-2007-0069946 (2007-07-01), None

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