Method for manufacturing capacitor for semiconductor device

Details Method for manufacturing capacitor for semiconductor device Method for manufacturing capacitor for semiconductor device

2006-07-13

2009-02-24

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S253000, C438S381000, C438S396000, C257SE21008, C257SE21648

Reexamination Certificate

active

07494863

ABSTRACT:
Disclosed is a method for manufacturing a capacitor in a semiconductor device. A method consistent with the present invention includes forming a lower electrode on a semiconductor substrate; forming a first interlevel dielectric layer on an entire surface of the semiconductor substrate, covering the lower electrode; selectively removing the first interlevel dielectric layer to form an opening exposing a surface of the lower electrode; sequentially forming a dielectric layer and a conductive layer over the entire surface of the semiconductor substrate including the opening; planarizing the conductive layer to form an upper electrode in the opening; and forming a second interlevel dielectric layer over the entire surface of the semiconductor substrate including the upper electrode.

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First Office Action from the State Intellectual Property Office of People's Republic of China, dated Aug. 3, 2007, In counterpart Chinese Patent Application No. 200610098799.8.
Office Action issued from the State Intellectual Property Office of the People's Republic of China on Jun. 27, 2008, from counterpart Chinese Patent Application No. 200610098799.8.

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