Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-02
2005-08-02
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S210000, C438S253000, C438S254000, C438S396000, C438S397000
Reexamination Certificate
active
06924189
ABSTRACT:
A method for manufacturing a capacitor bottom electrode by using low k dielectric material as a sacrificial layer is employed to simplify manufacturing steps and prevent electrical shortage phenomenon of bottom electrodes. The method includes steps of: preparing a semiconductor substrate obtained by a predetermined process; forming a sacrificial layer of low k dielectric material on the semiconductor substrate; forming a photoresist pattern on the sacrificial layer; etching the sacrificial layer by using the photoresist pattern as an etching mask, thereby forming an opening; depositing a conductive layer on sides and a bottom face of the opening and a top face of the sacrificial layer; forming a photoresist on the conductive layer, wherein a concave region of the conductive layer is completely filled with the photoresist; planarizing the conductive layer till a top face of the sacrificial layer is exposed; and forming a bottom electrode by removing the sacrificial layer enclosing the bottom electrode by using O2plasma and by removing a residual photoresist.
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Fourson George
García Joannie Adelle
Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
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