Method for manufacturing capacitor

Details Method for manufacturing capacitor Method for manufacturing capacitor

2005-02-15

2005-02-15

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S624000, C438S629000

Reexamination Certificate

active

06855600

ABSTRACT:
The present invention realizes high integration by utilizing an aluminum oxide as a capacitor insulating layer having a high dielectric constant, improving characteristics of a semiconductor device by using a low temperature vapordeposition and a low temperature annealing, improving leakage current characteristics by utilizing titanium as an upper electrode of the capacitor and reduces manufacturing costs by simplifying the capacitor manufacturing process. Therefore, the present invention is very useful and effective.

REFERENCES:
patent: 6348259 (2002-02-01), Hilarius et al.
patent: 6355519 (2002-03-01), Lee
patent: 20020025453 (2002-02-01), Tatsumi

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