Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-06-24
1999-09-14
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438203, 438234, 257370, 257372, H01L 2976
Patent
active
059536039
ABSTRACT:
Disclosed is a method for manufacturing a BiCMOS in which a complementary MOS transistor and a bipolar transistor are formed on the same substrate, comprising the steps of: providing a semiconductor substrate with impurities of a first conductivity type; forming field oxides for device isolation at the substrate to define a first group active region having two active regions and a second group active region having five active regions in series arrangement; forming a first mask pattern to expose three central active regions of the second group active region; forming a buried layer of a second conductivity type at a first depth from surfaces of the three central active regions using the first mask pattern; forming a second mask pattern to expose either one active region of the first group active region and two active regions at both edge portions of the second group active region; forming first well regions of the second conductivity type in which the impurities of the second conductivity type are distributed to a second depth from surfaces of the two exposed active regions of the second group active region using the second mask pattern, wherein the first well regions are overlapped with the buried layer; forming a third mask pattern to expose a remaining active region of the first group active region; and forming a second well in which the impurities of the first conductivity type are distributed at a third depth from a surface of the remaining active region using the third mask pattern.
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patent: 5407840 (1995-04-01), Manoliu et al.
patent: 5504364 (1996-04-01), Chang et al.
patent: 5776807 (1998-07-01), Ronkainen et al.
Dietrich Mike
Hyundai Electronics Industries Co,. Ltd.
Monin, Jr. Donald L.
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