Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2005-12-27
2009-08-25
Luu, Chuong A (Department: 2892)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S530000
Reexamination Certificate
active
07579264
ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a semiconductor substrate, forming a laminated body on the first insulating film that includes a polysilicon film and a metal film that is separated from the insulating film by means of the polysilicon film, and forming a first wiring layer and a first electrode simultaneously by patterning the laminated body.
REFERENCES:
patent: 5232861 (1993-08-01), Miwa
patent: 5449637 (1995-09-01), Saito et al.
patent: 5472887 (1995-12-01), Hutter et al.
patent: 5604143 (1997-02-01), Ishida et al.
patent: 6165880 (2000-12-01), Yaung et al.
patent: 6235574 (2001-05-01), Tobben et al.
patent: 6309921 (2001-10-01), Ema et al.
patent: 6511883 (2003-01-01), Pan et al.
patent: 6946335 (2005-09-01), Ip et al.
patent: 6972221 (2005-12-01), Takahashi
patent: 7265011 (2007-09-01), Yoon et al.
patent: 2004/0185611 (2004-09-01), Berthold et al.
patent: 2005/0048729 (2005-03-01), Yoon et al.
patent: 2006/0014389 (2006-01-01), Osanai
patent: 4/74426 (1992-03-01), None
Arora Ajay K
Luu Chuong A
Oki Semiconductor Co., Ltd.
Rabin & Berdo, PC.
LandOfFree
Method for manufacturing an electrode structure of a MOS... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing an electrode structure of a MOS..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing an electrode structure of a MOS... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4095582