Method for manufacturing aluminum metal interconnection layer by

Details Method for manufacturing aluminum metal interconnection layer by Method for manufacturing aluminum metal interconnection layer by

1998-08-27

2000-11-07

Thomas, Tom

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438607, 438614, 438761, 438762, 117 9, 117937, 117939, 118724, H01L 2348, H01L 23485, H01L 2704

Patent

active

061436593

ABSTRACT:
A method for forming an Al layer using an atomic layer deposition method is disclosed. First, a semiconductor substrate is loaded into a deposition chamber. Then, an Al source gas is supplied into the deposition chamber and the Al source gas is chemisorbed into the semiconductor substrate to form the Al layer. Next, a purge gas is supplied onto the deposition chamber without supplying the Al source gas so that the unreacted Al source gas is removed, thereby completing the Al layer. To form an Al layer to a required thickness, the step of supplying the Al source gas and the step of supplying the purge gas are repeatedly performed, thereby forming an Al atomic multilayer. Therefore, the uniformity and step coverage of the Al layer can be greatly improved.

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