Method for manufacturing a vertical transistor that includes...

Details Method for manufacturing a vertical transistor that includes... Method for manufacturing a vertical transistor that includes...

2009-11-09

2010-12-28

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000, C438S429000, C257SE21629

Reexamination Certificate

active

07858475

ABSTRACT:
A manufacturing method of a semiconductor device includes: forming multiple trenches on a semiconductor substrate; forming a second conductive type semiconductor film in each trench to provide a first column with the substrate between two trenches and a second column with the second conductive type semiconductor film in the trench, the first and second columns alternately repeated along with a predetermined direction; thinning a second side of the substrate; and increasing an impurity concentration in a thinned second side so that a first conductive type layer is provided. The impurity concentration of the first conductive type layer is higher than the first column. The first column provides a drift layer so that a vertical type first-conductive-type channel transistor is formed.

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