Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1997-01-22
1998-06-23
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438268, H01L 213205, H01L 214763
Patent
active
057705143
ABSTRACT:
In a vertical field effect transistor having a trench gate and a method of manufacturing the same according to the present invention, p-type base and n.sup.+ -type source diffusion layers are formed in this order in a surface region of an n.sup.31 -type epitaxial layer on an n.sup.+ -type semiconductor substrate. A trench is then provided to such a depth as to penetrate the diffusion layers. A dope polysilicon layer is deposited and buried into the trench with a gate insulation film interposed between them. The polysilicon layer is etched to have the same level as that of the entrance of the trench, and a dope polysilicon layer 18 is selectively grown thereon, thereby forming a trench gate in which an upper corner portion of the trench is not covered with a gate electrode. Consequently, the concentration of electric fields at the corner portion can be mitigated thereby to increase an absolute withstand voltage of the gate and the variations in threshold voltage can be suppressed in a BT test.
REFERENCES:
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4455740 (1984-06-01), Iwai
patent: 5016067 (1991-05-01), Mori
patent: 5108938 (1992-04-01), Solomon
patent: 5312782 (1994-05-01), Miyazawa
patent: 5326711 (1994-07-01), Malhi
patent: 5378914 (1995-01-01), Ohzu et al.
Baba Yoshiro
Matsuda Noboru
Tsuchitani Masanobu
Yanagiya Satoshi
Booth Richard A.
Kabushiki Kaisha Toshiba
Niebling John
LandOfFree
Method for manufacturing a vertical transistor having a trench g does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a vertical transistor having a trench g, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a vertical transistor having a trench g will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1394379