Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-06-12
2007-06-12
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S197000, C438S198000
Reexamination Certificate
active
10499090
ABSTRACT:
A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl2, SF6and Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer. A source region and a drain region opposite each other with respect to the gate electrode are formed by implanting impurities into the semiconductor layer and a source electrode and drain electrode are formed to be electrically connected to the source region and drain region.
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English Abstract for JP 09-213630.
English Abstract for JP 2000-353811.
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Choi Beom-Rak
Choi Joon-Hoo
Kang Myung-Koo
Kang Sook-Young
Song Jean-Ho
Cantor & Colburn LLP
Le Thao P.
Samsung Electronics Co,. Ltd.
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