Method for manufacturing a thermal interface material

Etching a substrate: processes – Etching of semiconductor material to produce an article...

Reexamination Certificate

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C216S008000, C216S074000, C216S096000, C977S742000

Reexamination Certificate

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07396477

ABSTRACT:
An exemplary method for manufacturing a thermal interface material includes the steps of: providing a first substrate having a first surface and an opposite second substrate having an opposite second surface spaced apart a predetermined distance; forming a number of carbon nanotubes from one of the first the second surfaces; forming a composite material by filling interstices between the carbon nanotubes with a liquid state base material; curing the liquid state base material filled in the interstices between the carbon nanotubes; and removing the first and the second substrates from the composite material.

REFERENCES:
patent: 6407922 (2002-06-01), Eckblad et al.
patent: 2003/0111333 (2003-06-01), Montgomery
patent: 2004/0266065 (2004-12-01), Zhang et al.
patent: 2005/0255313 (2005-11-01), Kyotani et al.
patent: 2006/0054490 (2006-03-01), Montgomery et al.
patent: 2006/0073332 (2006-04-01), Huang et al.
patent: 2006/0251897 (2006-11-01), Pan et al.

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