Method for manufacturing a static random access memory cell

Details Method for manufacturing a static random access memory cell Method for manufacturing a static random access memory cell

1997-06-26

2000-07-18

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438953, 438152, 438153, H01L 218234

Patent

active

060906545

ABSTRACT:
Disclosed is a semiconductor device having an enhanced current amount ratio, and a manufacturing method thereof. The semiconductor device includes a first transistor and a second transistor. There is a selective electric current capacity difference between the first transistor and the second transistor, wherein a gate degeneracy of the first transistor is different from a gate degeneracy of the second transistor. Among the first and second transistors, the gate degeneracy of the transistor requiring a small amount of current is higher than the gate degeneracy of the transistor requiring a large amount of current.

REFERENCES:
patent: 5324973 (1994-06-01), Sivan
patent: 5955746 (1999-09-01), Kim
Patent Abstracts of Japan, Publication No. 07022521 (Jan. 24, 1995).
English translation of Purpose and Constitution of Japanese No. 1-298761 (Dec. 1, 1989).
English translation of Purpose and Constitution of Japanese No. 3-94464 (Apr. 19, 1991).
English translation of Purpose and Constitution of Japanese Application No. 1-292853 (Nov. 27, 1989).
English translation of Purpose and Constitution of Japanese Application No. 1-287960 (Nov. 20, 1989).

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