Method for manufacturing a silicon sensor and a silicon sensor

Details Method for manufacturing a silicon sensor and a silicon sensor Method for manufacturing a silicon sensor and a silicon sensor

2006-02-14

2006-02-14

Kwok, Helen (Department: 2856)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C438S053000

Reexamination Certificate

active

06998059

ABSTRACT:
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

REFERENCES:
patent: 4922756 (1990-05-01), Henrion
patent: 5484073 (1996-01-01), Erickson
patent: 5998816 (1999-12-01), Nakaki et al.
patent: 196 03 829 (1997-08-01), None
patent: 0 763 881 (1996-09-01), None

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