Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-03-11
2008-03-11
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S664000, C257SE21203
Reexamination Certificate
active
07341933
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes providing a capped polysilicon gate electrode (290) over a substrate (210), the capped polysilicon gate electrode (290) including a buffer layer (260) located between a polysilicon gate electrode layer (250) and a protective layer (270). The method further includes forming source/drain regions (710) in the substrate (210) proximate the capped polysilicon gate electrode (290), removing the protective layer (270) and the buffer layer (260), and siliciding the polysilicon gate electrode layer (250) to form a silicided gate electrode (1110).
REFERENCES:
patent: 6376320 (2002-04-01), Yu
patent: 6555453 (2003-04-01), Xiang et al.
patent: 6586332 (2003-07-01), Lee
patent: 2002/0197805 (2002-12-01), Kwon et al.
Bu Haowen
Hall Lindsey
Lu Jiong-Ping
Yu Shaofeng
Brady III W. James
Chaudhari Chandra
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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