Method for manufacturing a semiconductor wafer using a mask that

Details Method for manufacturing a semiconductor wafer using a mask that Method for manufacturing a semiconductor wafer using a mask that

1998-11-30

2000-10-31

Huff, Mark F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430 5, 430311, 430942, 2504922, G03F 720

Patent

active

061400203

ABSTRACT:
A lithographic mask (FIG. 9 or FIG. 10) that is primarily used for SCALPEL processing has a substrate (100). Layers (102, 104, 106, 108, 110, and 112) are formed and selectively patterned and etched to form E-beam exposure windows (118) and skirt regions (120) framing the windows (118). The skirt regions (120) and some portions of the patterned features (124) within the window (118) are formed having thicker/thinner regions of material or formed of different material whereby different regions of the mask (FIG. 9) scatter energy to differing degrees. The different scattering regions on the mask allow SCALPEL patterns to be formed on the wafer with improved critical dimension (CD) control, reduced aberrant feature formation, and improved yield.

REFERENCES:
patent: 5308741 (1994-05-01), Kemp
patent: 5942760 (1999-08-01), Thompson

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