Method for manufacturing a semiconductor memory device having a

Details Method for manufacturing a semiconductor memory device having a Method for manufacturing a semiconductor memory device having a

1993-08-27

1995-09-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054478782

ABSTRACT:
A storage electrode of a capacitor of a semiconductor memory device and a method for manufacturing the same are disclosed. A first electrode of the capacitor comprises a main electrode having a plurality of microtrenches and micropillars formed therein, an outer wall surrounding the microtrenches and micropillars, a granular silicon layer formed on an outer sidewall of the outer wall, and a column electrode supporting the main electrode and electrically connecting the main electrode to a source region of a transistor of the semiconductor device. The first electrode preferably has a horizontally fin-structured auxiliary electrode formed underneath the main electrode and electrically connected to the column electrode of the first electrode. The capacitor may be formed by using an etching end-point detection layer and an HSG polysilicon layer. The effective surface area of the storage electrode of a capacitor is increased to thereby obtain adequate cell capacitance. Also, uniform shapes of the storage electrodes are preferably obtained to thereby attain uniform cell capacitance.

REFERENCES:
patent: 5134086 (1992-07-01), Ahn
patent: 5256587 (1993-10-01), Jun et al.
patent: 5324679 (1994-06-01), Kim et al.

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