Method for manufacturing a semiconductor memory device

Details Method for manufacturing a semiconductor memory device Method for manufacturing a semiconductor memory device

1998-06-25

2000-09-19

Hardy, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438199, 438200, 438201, 438210, 257390, H01L 2144

Patent

active

06121079&

ABSTRACT:
In DRAM comprising a read pass transistor, a write pass transistor and a storage transistor, a depletion transistor is connected to a source of the storage transistor. On a part of the source and drain of the depletion transistor, by forming an impurity region of same conductivity as that of the substrate on which the transistors are formed, a substrate voltage applied to the substrate is supplied to the storage transistor through the depletion transistor. An additional metal wire for connecting the source of the storage transistor to Vss voltage(ground voltage or substrate voltage)terminal and a contact hole area for such metal wire are not required. Accordingly, a high integration of the semiconductor can be accomplished and a a reduction of reliability thereof can be decreased.

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