Method for manufacturing a semiconductor integrated circuit devi

Details Method for manufacturing a semiconductor integrated circuit devi Method for manufacturing a semiconductor integrated circuit devi

1996-01-16

1997-08-19

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438588, 438594, H01L 21265

Patent

active

056588135

ABSTRACT:
After the surface of a semiconductor substrate is separated into a cell region and a peripheral region, a first conductive film is formed in the peripheral region, and a tunnel oxide film is formed in the cell region. Further there are sequentially grown a second conductive film for a floating gate, an intermediate insulating film and a third conductive film for a control gate which are sequentially and selectively etched in order of the third conductive film, the intermediate insulating film and the second conductive film using a mask. The surface of the semiconductor substrate in the peripheral region is protected by the first conductive film so that it can be prevented from be damaged. Thus, when the intermediate insulating film of a stack gate structure is etched, the surface of the semiconductor substrate in an active region is protected from damage.

REFERENCES:
patent: 4720323 (1988-01-01), Sato
patent: 4775642 (1988-10-01), Chang et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 5075245 (1991-12-01), Woo et al.
patent: 5087587 (1992-02-01), Wada et al.
patent: 5147811 (1992-09-01), Sakagami
patent: 5153144 (1992-10-01), Komori et al.
patent: 5188976 (1993-02-01), Kume et al.

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