Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-26
2005-07-26
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S700000
Reexamination Certificate
active
06921699
ABSTRACT:
A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.
REFERENCES:
patent: 5082795 (1992-01-01), Temple
patent: 5298442 (1994-03-01), Bulucea et al.
patent: 5637898 (1997-06-01), Baliga
patent: 5998833 (1999-12-01), Baliga
patent: 6001678 (1999-12-01), Takahashi
patent: 6163052 (2000-12-01), Liu et al.
patent: 6297101 (2001-10-01), Schaeffer
patent: 6331466 (2001-12-01), Takahashi et al.
patent: 6388286 (2002-05-01), Baliga
patent: 6489204 (2002-12-01), Tsui
patent: 6621121 (2003-09-01), Baliga
patent: 6660591 (2003-12-01), Peake et al.
patent: 6707100 (2004-03-01), Gajda
patent: 2002/0009854 (2002-01-01), Hshieh et al.
patent: 2002/0160572 (2002-10-01), Lee
patent: 2002/0167046 (2002-11-01), Aoki et al.
Amali Adam
He Donald
Kinzer Daniel
Kiyawat Siddharth
Ma Ling
Coleman W. David
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
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