Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-12
2011-07-12
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S650000, C438S670000, C257SE21587
Reexamination Certificate
active
07977235
ABSTRACT:
A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, forming a patterned mask layer on the patterned substrate, where the patterned mask layer contains openings that expose the Cu metal surfaces. The method further includes depositing a metal-containing layer on the Cu metal surfaces, depositing an additional metal-containing layer on the patterned mask layer, and removing the patterned mask layer and the additional metal-containing layer from the patterned substrate to selectively form metal-containing cap layers on the Cu metal surfaces.
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Quach Tuan N.
Tokyo Electron Limited
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