Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-12
2007-06-12
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S306000
Reexamination Certificate
active
11074905
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having L-shaped sidewall spacers (430) on opposing sidewalls thereof and placing source/drain implants (310or510) into the substrate (110) proximate the gate structure (130). The method for manufacturing the semiconductor device further includes removing at least a portion of a horizontal segment of the L-shaped sidewall spacers (430).
REFERENCES:
patent: 6015741 (2000-01-01), Lin et al.
patent: 6156598 (2000-12-01), Zhou et al.
patent: 6197648 (2001-03-01), Kasai et al.
patent: 6287924 (2001-09-01), Chao et al.
patent: 6551887 (2003-04-01), Kwon et al.
patent: 7018888 (2006-03-01), Goodlin et al.
patent: 7064085 (2006-06-01), Chiu et al.
patent: 2004/0026747 (2004-02-01), Maki et al.
patent: 2006/0019456 (2006-01-01), Bu et al.
Chatterjee Amitava
Goodlin Brian E.
Kirmse Karen H. R.
Siddiqui Shirin
Yoon Jong Shik
Brady W. James
Keagy Rose Alyssa
Nguyen Tuan H.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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