Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-01
2005-02-01
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S693000
Reexamination Certificate
active
06849542
ABSTRACT:
The invention provides a method for manufacturing a semiconductor device with reduced dishing and erosion. In this method for manufacturing a semiconductor device, the convex/concave pattern is planarized by relatively moving a substrate having the convex/concave pattern on the surface and a polishing tool with pressing the convex/concave surface of the substrate on the polishing tool. The polishing tool is provided with a grindstone10having a plurality of polygonal segments20, which comprises abrasive23that is bonded together with resin24and contains pores22. The polygonal segments are arranged so that corners of three or more polygonal segments are not located near each other.
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Honda Minoru
Kaise Masahiro
Katagiri Soichi
Kondo Seiichi
Yamaguchi Ui
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Nippon Tokushu Kent Co., Ltd.
Smoot Stephen W.
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