Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1995-07-06
1998-03-24
Niebling, John
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438974, H01L 21316
Patent
active
057312478
ABSTRACT:
A method for manufacturing a semiconductor device can reduce a micro-roughness and does not change a construction and electric characteristics of elements formed in the semiconductor device. In the method for manufacturing the semiconductor device including a pre-oxidation process in which an oxide layer is first formed on a silicon wafer, and the oxide layer is secondly eliminated to eliminate impurities on a surface of the silicon wafer, a formation of the oxide layer in the pre-oxidation process is performed in an oxidization atmosphere including H.sub.2 O and gas including germanium hydride (german --GeH.sub.4 --). Since german (GeH.sub.4) is included in the oxidization atmosphere, it is possible to reduce a softening temperature of the silicon dioxide formed in pre-oxidation, thereby decreasing the micro-roughness on the surface of the silicon wafer. Furthermore, since it is possible to perform the pre-oxidation process in a low temperature and in a short time, there is no change of a construction and electric characteristics of elements formed in the semiconductor device.
REFERENCES:
patent: 4409260 (1983-10-01), Rastor et al.
patent: 4920076 (1990-04-01), Holland et al.
patent: 5132244 (1992-07-01), Roy
patent: 5308788 (1994-05-01), Fitch et al.
patent: 5312766 (1994-05-01), Aronowitz et al.
patent: 5316981 (1994-05-01), Gardner et al.
patent: 5489550 (1996-02-01), Moslehi
Journal of Vacuum Science and Technology, Part A, vol. 9, No. 3, May/Jun. 1991, pp. 1058-1065, M. Offenberg, et al., "Surface Etching and Roughening in Integrated Processing of Thermal Oxides".
Patent Abstracts of Japan, vol. 17, No. 514(E-1433), Sep. 16, 1993, JP 05 136 111, Jun. 1, 1993.
J. Electrochem. Soc., vol. 132, No. 2, pp. 409-415, Feb. 1985, K. Nassau, et al., "Modified Phosphosilicate Glasses for VLSI Applications".
Extended Abstracts of Electrochemical Society Fall Meeting, Abstract No. 228, pp. 359-360, 1983, Asif Iqbal, et al., "Phosphogermandsilicate Glass Films For VLSI Devices".
Amai Tsutomu
Samata Shuichi
Ueno Yoshihiro
Kabushiki Kaisha Toshiba
Mulpuri S.
Niebling John
LandOfFree
Method for manufacturing a semiconductor device including pre-ox does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device including pre-ox, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device including pre-ox will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2288721