Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-04-01
2011-12-13
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000
Reexamination Certificate
active
08076191
ABSTRACT:
In processing memory cells for forming a nonvolatile memory in a semiconductor device, a second polysilicon film is formed in such a manner as to cover a first polysilicon film and a dummy gate electrode. Thus, the second polysilicon film is formed reflecting the shapes of a step difference portion and a gap groove. Particularly, in the second polysilicon film covering the gap groove, a concave part is formed. Subsequently, over the second polysilicon film, an antireflection film is formed. Thus, the antireflection film having high flowability flows from the higher region to the lower region of the step difference portion, but is stored in a sufficient amount in the concave part. Accordingly, the antireflection film is supplied from the concave part so as to compensate for the amount of the antireflection film to flow out therefrom.
REFERENCES:
patent: 7601581 (2009-10-01), Taniguchi et al.
patent: 7859045 (2010-12-01), Nakagawa et al.
patent: 2007-234861 (2007-09-01), None
Abe Shinichiro
Taniguchi Yasuhiro
Yamakoshi Hideaki
Yashima Hideyuki
Geyer Scott B
Miles & Stockbridge P.C.
Renesas Electronics Corporation
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