Method for manufacturing a semiconductor device having an...

Details Method for manufacturing a semiconductor device having an... Method for manufacturing a semiconductor device having an...

2001-12-11

2008-12-09

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S203000, C257S370000, C257SE21676

Reexamination Certificate

active

07462530

ABSTRACT:
An n-type buried diffusion layer is formed on the surface layer of the prescribed area of a p-type silicon substrate, and a p-type first high-concentration isolation diffusion layer is formed in the silicon substrate so as to surround the buried diffusion layer. An n-type epitaxial layer is formed on the silicon substrate, the buried diffusion layer, and the first high-concentration isolation diffusion layer. A p-type second high-concentration isolation diffusion layer is formed in the epitaxial layer on the first high-concentration isolation diffusion layer. A p-type low-concentration isolation diffusion layer for isolating the epitaxial layer into a plurality of island regions is formed in the epitaxial layer on the second high-concentration isolation diffusion layer.

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