Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-01
2005-11-01
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S229000
Reexamination Certificate
active
06960512
ABSTRACT:
The present invention provides methods for manufacturing semiconductor devices. In one embodiment, the method includes forming a gate oxide over a substrate and a gate electrode over the gate oxide. The method also includes implanting impurities into the substrate using the gate electrode as an implant mask to form lightly-doped regions in the substrate. The method further includes forming a first spacer adjacent the gate electrode, and implanting impurities into the substrate and through a portion of the lightly-doped regions using the first spacer as an implant mask to form deep source/drain regions in the substrate. The method still further includes forming a second spacer adjacent the first spacer, implanting impurities into the substrate using the second spacer as an implant mask to form a graded source/drain region in the substrate, and removing the second spacer. Also disclosed is a semiconductor device constructed using the techniques disclosed herein.
REFERENCES:
patent: 5949105 (1999-09-01), Moslehi
patent: 6258680 (2001-07-01), Fulford et al.
Cheng Kuan-Lun
Cheng Shui-Ming
Fung Ka-Hing
Huang Huan-Tsung
Wang Yin-Pin
Lindsay Jr. Walter L.
Slater & Matsil L.L.P.
Taiwain Semiconductor Manufacturing Company, Ltd.
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