Method for manufacturing a semiconductor device having a low...

Details Method for manufacturing a semiconductor device having a low... Method for manufacturing a semiconductor device having a low...

2006-12-19

2006-12-19

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S308000, C438S475000

Reexamination Certificate

active

07151033

ABSTRACT:
A method for manufacturing a DRAM device includes a hydrogenating step conducted to source/drain diffused regions in a hydrogen ambient at a substrate temperature not lower than 350 degrees C., and a dehydrogenating step in an inactive gas ambient at a substrate temperature of lower than 350 degrees C., before a packaging step. If a defective cell having a lower refreshing time is found in the test before the packaging step, the defective cell is replaced by a redundant cell. The resultant DRAM has a lower degradation in the refreshing characteristic after the packaging step.

REFERENCES:
patent: 6590230 (2003-07-01), Yamazaki et al.
patent: 2005/0134754 (2005-06-01), Yang et al.
patent: H06-061486 (1994-03-01), None
patent: 3212150 (2001-07-01), None
“Defects related to DRAM leakage current studied by electrically detected magnetic resonance”, T. Umedaa*, Y. Mochizukia, K. Okonogib,K. Hamadab, vol. 308-310, pp. 1169-1172(2001).

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