Method for manufacturing a semiconductor device having a low...

Details Method for manufacturing a semiconductor device having a low... Method for manufacturing a semiconductor device having a low...

2006-10-31

2006-10-31

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S308000, C438S514000, C438S519000, C438S522000

Reexamination Certificate

active

07129141

ABSTRACT:
A method for manufacturing a DRAM device includes the step of implanting phosphor at a specified dosage and heat treating the implanted phosphor for diffusion thereof to form source/drain regions, and implanting fluorine into the source/drain regions and heat treating the implanted fluorine for diffusion thereof. The resultant DRAM memory cell has a larger data storage capability due to lower junction leakage current caused by vacancy type defects formed in the metallurgical junction between the source/drain regions and the channel region.

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T. Umeda, et al., “Defects related to DRAM leakage current studied by electrically detected magnetic resonance”, vol. 308-310, pp. 1169-1172, 2001.
Korean Office Action dated Jun. 9, 2006 with a partial English translation.

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