Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-23
2006-05-23
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000
Reexamination Certificate
active
07049221
ABSTRACT:
After forming an Si3N4film as a hard mask for a wiring, a lower resin film for filling and planarizing a level difference thereon is formed. Next, an SOG film is formed on the lower resin film, and a resist mask on which a via hole pattern is formed is formed thereon. The SOG film is etched by using the resist mask as a mask. The lower resin film is etched by using the SOG film as a mask, and at the same time, the resist mask is removed. Then, a triple layer hard mask is etched by using the lower resin film as a mask. Consequently, a via hole pattern is formed on these films, and the SOG film is simultaneously removed. According to this method, the resist mask having a pattern as designed can be obtained, and a micro pattern with high precision can be obtained.
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Taiwan Office Action for Taiwan Application No. 92130060, dated Jan. 14, 2005.
Office Action from Taiwanese Patent Office received on Sep. 29, 2004, with English language translation.
Doty Heather
Fujitsu Limited
Jr. Carl Whitehead
Westerman Hattori Daniels & Adrian LLP
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