Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2004-07-29
2008-09-09
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S592000, C257SE21165
Reexamination Certificate
active
07422968
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor devices. The method for manufacturing a semiconductor device (100) , among other steps, includes forming a gate structure (120) over a substrate (110) and forming source/drain regions (190) in the substrate (110) proximate the gate structure (120). The method further includes subjecting the gate structure (120) and substrate (110) to a dry etch process and placing fluorine in the source/drain regions to form fluorinated source/drains (320) subsequent to subjecting the gate structure (120) and substrate (110) to the dry etch process. Thereafter, the method includes forming metal silicide regions (510, 520) in the gate structure (120) and the fluorinated source/drains (320).
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Bonifiield Thomas D.
Hall Lindsey
Lu Jiong-Ping
Miles Donald
Montgomery Clint
Brady III Wade J.
Chaudhari Chandra
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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