Method for manufacturing a semiconductor device for use in a...

Details Method for manufacturing a semiconductor device for use in a... Method for manufacturing a semiconductor device for use in a...

2006-03-14

2006-03-14

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S396000, C438S785000

Reexamination Certificate

active

07012001

ABSTRACT:
A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and Al2O3films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92(TiO2)0.08by using an atomic layer deposition (ALD).

REFERENCES:
patent: 4734340 (1988-03-01), Saito et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5621606 (1997-04-01), Hwang
patent: 5841186 (1998-11-01), Sun et al.
patent: 5847424 (1998-12-01), Kang
patent: 5923524 (1999-07-01), Cava
patent: 5926710 (1999-07-01), Tseng
patent: 6046081 (2000-04-01), Kuo
patent: 6144060 (2000-11-01), Park et al.
patent: 6235594 (2001-05-01), Merchant et al.
patent: 6248640 (2001-06-01), Nam
patent: 6339009 (2002-01-01), Lee et al.
patent: 6433380 (2002-08-01), Shin
patent: 2000-258777 (2000-09-01), None

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