Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-05
2006-09-05
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000
Reexamination Certificate
active
07101753
ABSTRACT:
A semiconductor device having a gate electrode on a silicon substrate via a gate insulating film is formed by laminating the gate insulating film with a silicon oxide film, formed on the silicon substrate, an Hf silicate film is formed on the silicon oxide film, and a nitrogen-containing Hf silicate film formed on the Hf silicate film, and containing Hf in a peak concentration in a range from one atomic % to thirty atomic %, and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic %.
REFERENCES:
patent: 5705224 (1998-01-01), Murota et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6544906 (2003-04-01), Rotondaro et al.
patent: 6548424 (2003-04-01), Putkonen
patent: 6642131 (2003-11-01), Harada
patent: 2003/0218223 (2003-11-01), Nishiyama et al.
patent: 2004/0169240 (2004-09-01), Koyama et al.
patent: 2005/0110091 (2005-05-01), Yamazaki et al.
patent: 2005/0167768 (2005-08-01), Yamaguchi
patent: 1 363 333 (2003-11-01), None
patent: 2002-343790 (2002-11-01), None
patent: 2003-008011 (2003-01-01), None
Vainonen-Ahlgren, E., et al.; “Atomic layer deposition of hafnium and zirconium silicate thin films”,Computational Materials Science, vol. 27, No. 1-2, pp. 65-69, (Mar. 2003).
Hu, H. et al.; “MIM Capacitors Using Atomic-Layer-Deposited High-K (HfO2)1-x(Al2O3)xDielectrics”,IEEE Electron Device Letters, vol. 24, No. 2, pp. 60-62, (Feb. 2003).
Hobbs, C. et al.; “Fermi Level Pinning at the PolySi/Metal Oxide Interface”,2003 Symposium of VLSI Tech. Digest of Technical Papers, pp. 3-4.
Arikado Tsunetoshi
Kamiyama Satoshi
Leydig , Voit & Mayer, Ltd.
NEC Electronics Corporation
Pham Long
LandOfFree
Method for manufacturing a semiconductor device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3538162