Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2008-07-01

2008-07-01

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S248000, C438S259000, C438S270000, C438S391000, C257SE21546, C257SE21548

Reexamination Certificate

active

07393750

ABSTRACT:
Embodiments relate to a method of manufacturing a semiconductor device. According to embodiments, the method may include forming a first and a second insulating layer on a semiconductor substrate of which an active area and an isolation region are defined, forming a first and a second insulating layer pattern by selectively removing the first and the second insulating layer to expose the isolation region of the semiconductor substrate, forming a trench having a prescribed depth by selectively removing the semiconductor substrate by using the first and the second insulating layer pattern as a mask, forming an isolation layer as a third insulating layer in the trench, removing a prescribed thickness of the isolation layer from the surface portion through etching the whole semiconductor substrate while remaining at the side portions of the first and second insulating layer pattern and the active area as a side wall shape, removing the first and the second insulating layer pattern, and removing a prescribed thickness of the isolation layer from the surface portion to protrude the active area of the semiconductor substrate.

REFERENCES:
patent: 6180467 (2001-01-01), Wu et al.
patent: 7297609 (2007-11-01), Kim
patent: 2007/0004129 (2007-01-01), Lee et al.

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