Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2011-04-12

2011-04-12

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C257SE21396, C257SE21553

Reexamination Certificate

active

07923330

ABSTRACT:
A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into the semiconductor substrate. The thickness of the semiconductor substrate is then reduced by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures. At least a first mask is formed on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures, and doping regions are formed in the semiconductor substrate between the trench structures.

REFERENCES:
patent: 6306719 (2001-10-01), Lee
patent: 2003/0143790 (2003-07-01), Wu
patent: 2003/0173618 (2003-09-01), Zundel et al.
patent: 2005/0242370 (2005-11-01), Weber et al.
patent: 10345447 (2005-05-01), None
Sze, S. M., “Semiconductor Devices, Physics and Technology,” 2nd Edition, Chapter 12, Lithography and Etching, pp. 404-418, (1985, 2002).

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