Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2011-04-05

2011-04-05

Fahmy, Wael M (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S237000, C438S268000, C257SE21577

Reexamination Certificate

active

07919374

ABSTRACT:
A conventional power MOSFET structure is difficult to improve a breakdown voltage of an element even using a super-junction structure. A power MOSFET according to an embodiment of the invention is a semiconductor device of a super-junction structure, including: a gate electrode filled in a trench formed on a semiconductor substrate; a gate wiring metal forming a surface layer; and a gate electrode plug connecting between the gate electrode and the gate wiring metal. Thus, a polysilicon layer necessary for the conventional typical power MOSFET is unnecessary. That is, column regions of an element active portion and an outer peripheral portion can be formed under the same conditions. As a result, it is possible to improve an element breakdown voltage as compared with the conventional one.

REFERENCES:
patent: 6600193 (2003-07-01), Darwish
patent: 6657256 (2003-12-01), Hshieh et al.
patent: 2002/0070418 (2002-06-01), Kinzer et al.
patent: 2002/0074596 (2002-06-01), Suzuki et al.
patent: 2002/0187597 (2002-12-01), Ninomiya
patent: 2002/0190313 (2002-12-01), Takaishi et al.
patent: 2003/0219933 (2003-11-01), Yamauchi et al.
patent: 2004/0016959 (2004-01-01), Yamaguchi et al.
patent: 2004/0224455 (2004-11-01), Henson et al.
patent: 2005/0212053 (2005-09-01), Miura et al.
patent: 2006/0157813 (2006-07-01), Saito et al.
patent: 2006/0244054 (2006-11-01), Kobayashi
patent: 2002-184985 (2002-06-01), None
patent: 2002-368221 (2002-12-01), None
patent: 2002-373988 (2002-12-01), None

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