Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2011-04-12

2011-04-12

Huynh, Andy (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21410, C257S302000, C257S329000, C257S334000, C257S330000

Reexamination Certificate

active

07923329

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a spin-on-carbon (SOC) film that facilitates a low temperature baking process, can prevent collapse of vertical transistors while forming a bit line, thereby providing a more simple manufacturing method and improving manufacturing yields.

REFERENCES:
patent: 5756237 (1998-05-01), Amemiya
patent: 6107133 (2000-08-01), Furukawa et al.
patent: 7348628 (2008-03-01), Yoon et al.
patent: 2003/0169629 (2003-09-01), Goebel et al.
patent: 2005/0014667 (2005-01-01), Aoyama et al.
patent: 2008/0213544 (2008-09-01), Devadoss et al.
patent: 2008/0292995 (2008-11-01), Houlihan et al.
patent: 1230026 (1999-09-01), None
patent: 0 948 053 (1999-10-01), None
patent: 10-0734313 (2007-06-01), None
patent: 10-2007-0109651 (2007-11-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2696659