Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1998-04-06

2000-02-08

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438268, 438290, 438770, 438138, H01L 21336

Patent

active

060227842

ABSTRACT:
A method (50) for designing a semiconductor device (10). The method (50) has an annealing step (59). In the annealing step (59), the semiconductor device (10) is annealed in an ambient containing oxygen. The oxygen has a partial pressure of greater than 11.85 Torr. The annealing step (59) results in a reduction of uncontrolled doping from the gate electrode (33) of the semiconductor device (10) to the channel region of the semiconductor device (10).

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patent: 4786609 (1988-11-01), Chen
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patent: 5371026 (1994-12-01), Hayden et al.
patent: 5405791 (1995-04-01), Ahmad et al.
patent: 5637514 (1997-06-01), Jeng et al.

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