Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1997-06-09

1998-08-18

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438199, 438225, 438227, 438527, 438529, H01L 218238

Patent

active

057958033

ABSTRACT:
A method of manufacturing a semiconductor device comprises; forming a device isolation region in a semiconductor substrate; forming at least a first conductivity type impurity region in the semiconductor substrate; and forming on the semiconductor substrate a transistor including a gate insulating film, a gate electrode, source/drain regions and a channel located directly under the gate electrode, wherein the first conductivity type impurity region is formed by the steps of: an ion implantation 1 having a concentration peak at a location deeper than the bottom of the device isolation region; an ion implantation 2 having a concentration peak at a location around the bottom of the device isolation region; an ion implantation 3 having a concentration peak around the junction regions where the source/drain regions are to be formed; and an ion implantation 4 having a concentration peak on the surface or directly under the surface of the region where the channel is to be formed.

REFERENCES:
patent: 4889825 (1989-12-01), Parrillo
patent: 5489540 (1996-02-01), Liu et al.
patent: 5501993 (1996-03-01), Borland
patent: 5654213 (1997-08-01), Choi et al.
patent: 5693505 (1997-12-01), Kobayashi

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