Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2008-03-18

2010-10-19

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S763000, C438S791000, C438S508000, C438S508000

Reexamination Certificate

active

07816281

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon substrate, and forming a silicon nitride film on the silicon oxide film. The step of forming the silicon nitride film includes the steps of growing a first silicon layer having a thickness larger than a thickness of a monoatomic silicon layer, nitriding the first silicon layer to form a first silicon nitride layer, growing a second silicon layer on the first silicon layer on the first silicon nitride layer, and nitriding the second silicon oxide layer to form a second silicon nitride layer.

REFERENCES:
patent: 2008/0119057 (2008-05-01), Chua et al.
patent: 2008/0214017 (2008-09-01), Murakawa et al.
patent: 2009/0258505 (2009-10-01), Takahashi
patent: 2004-6455 (2004-01-01), None

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