Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-08-01
2006-08-01
Barreca, Nicole (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S311000, C430S312000, C430S314000, C430S316000
Reexamination Certificate
active
07083899
ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device by employing a dual damascene process. After a first insulation film including a conductive pattern is formed on a substrate, at least one etch stop film and at least one insulation film are alternatively formed on the first insulation film. A via hole for a contact or a trench for a metal wiring is formed through the insulation film, and then the via hole or the trench is filled with a filling film including a water-soluble polymer. After a photoresist film is coated on the filling film, the photoresist film is patterned to form a photoresist pattern and to remove the filling film. The DOF and processing margin of the photolithography process for forming the photoresist pattern can be improved because the photoresist film can have greatly reduced thickness due to the filling film.
REFERENCES:
patent: 5935762 (1999-08-01), Dai et al.
patent: 6132928 (2000-10-01), Tanabe et al.
patent: 6323121 (2001-11-01), Liu et al.
patent: 6337269 (2002-01-01), Huang et al.
patent: 6689695 (2004-02-01), Lui et al.
patent: 6774037 (2004-08-01), Hussein et al.
patent: 6790770 (2004-09-01), Chen et al.
patent: 6821896 (2004-11-01), Shih
patent: 2002/0058397 (2002-05-01), Smith et al.
patent: 2003/0129844 (2003-07-01), Wang et al.
patent: 2002-55889 (2002-07-01), None
patent: 2002-66567 (2002-08-01), None
English language of Korean Publication No. 2002-66567.
English language of Korean Publication No. 2002-55889.
Kim Bong-Cheol
Lee Dae-Youp
Barreca Nicole
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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