Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-07
2006-03-07
Nguyen, Ha (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S200000, C438S216000, C438S225000, C438S258000, C438S275000, C438S297000, C438S439000
Reexamination Certificate
active
07008850
ABSTRACT:
A method for manufacturing the semiconductor device of which a transistor and a MNOS type memory transistor, each of which has a different gate withstand voltage and drain withstand voltage, are included in the same semiconductor layer.
REFERENCES:
patent: 6281050 (2001-08-01), Sakagami
patent: 2002/0052080 (2002-05-01), Lee
patent: 2002/0130314 (2002-09-01), Yim et al.
patent: 2005/0093047 (2005-05-01), Goda et al.
Ebina Akihiko
Inoue Susumu
Noda Takafumi
Tsuyuki Masahiko
Edwards Angell Palmer & Dodge
Lee Cheung
Nguyen Ha
Penny, Jr. John J.
Seiko Epson Corporation
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