Method for manufacturing a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S637000, C438S669000, C438S672000, C438S688000, C438S700000

Reexamination Certificate

active

06893960

ABSTRACT:
A method for manufacturing a semiconductor device capable of forming a fine interconnection structure without making the resistance at the through hole high is provided. More specifically, a semiconductor device having a first interconnection formed on the surface of a first layer insulating film is provided, and a second interconnection is also provided on the upper part of the first interconnection and is electrically connected to the first interconnection, and wherein the first interconnection is formed so that the width of the lower part is narrower than that of the upper part.

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patent: 6492257 (2002-12-01), Shields et al.
patent: 6576547 (2003-06-01), Li
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patent: 10-107140 (1998-04-01), None
patent: 10-275859 (1998-10-01), None
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patent: 11-317454 (1999-11-01), None

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