Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-24
2006-01-24
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S003000
Reexamination Certificate
active
06989304
ABSTRACT:
In the method of manufacturing a semiconductor device according to this invention, when an interlayer insulating film is fabricated such that an opening is cylindrical and low-pressure and long-throw sputtering is used for forming a lower ruthenium electrode, a ruthenium film can be deposited on the side wall of a deep hole. Further, after removing the ruthenium film deposited on the upper surface of the interlayer insulating film, a dielectric material comprising, for example, a tantalum pentoxide film is deposited. Successively, an upper ruthenium electrode is deposited using, for example, Ru(EtCp)2as a starting material and by chemical vapor deposition of conveying the starting material by bubbling. The upper ruthenium electrode can be formed with good coverage by using conditions that the deposition rate of the ruthenium film depends on the formation temperature (reaction controlling condition). This invention can provide a fine concave type capacitor having a ruthenium electrode.
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Hiratani Masahiko
Matsui Yuichi
Nabatame Toshihide
Shimamoto Yasuhiro
Kennedy Jennifer
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Renesas Technology Corp.
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