Method for manufacturing a rate-of-rotation sensor

Details Method for manufacturing a rate-of-rotation sensor Method for manufacturing a rate-of-rotation sensor

1997-08-08

2000-09-12

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 53, 7351436, 7351437, H01L 2100, G01P 1500

Patent

active

061177016

ABSTRACT:
A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating layer from a first layer. Thus, a simple electrical contacting (configuration) is achieved that is patterned out of a three-layer system. Since the same etching process is used for the first and the third layer, an especially efficient manufacturing is possible.

REFERENCES:
patent: 5576250 (1996-11-01), Diem et al.
patent: 5627317 (1997-05-01), Offenberg et al.
patent: 5721377 (1998-02-01), Kurle et al.
patent: 5723353 (1998-03-01), Muenzel et al.
patent: 5752410 (1998-05-01), Bernstein
patent: 5801070 (1998-09-01), Zanini-Fisher et al.
patent: 5804462 (1998-09-01), Liu et al.
patent: 5894090 (1999-04-01), Tang et al.

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