Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-07-15
2000-09-26
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438165, 438591, 438981, 148DIG43, 148DIG163, H01L 2184
Patent
active
061241539
ABSTRACT:
A method for manufacturing a polysilicon thin film transistor (TFT) according to the present invention reduces the electric field near the drain junction by varying partially the thickness of a gate insulating layer through a post oxide process. A polysilicon layer is patterned to become an active layer and a chemical vapor deposition oxide film deposited. By thermal oxidation a thermal oxide film is formed under the chemical vapor deposition oxide film. A gate electrode made of polysilicon is formed on the gate insulating layer. Thermal oxidation is performed to make the end portions of the thermal oxide film thicker than the portion under the gate electrode of the thermal oxide film. With this process, the electric field near the drain junction region is reduced and thus the leakage currents of the TFT decrease. In addition, the method in this invention is very simple compared with the conventional methods of obtaining a LDD structure and on-current is not reduced.
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Jin Yong-suk
Lee Joo-hyung
Bowers Jr. Charles L.
Radomsky Leon
Samsung Electronics Co,. Ltd.
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