Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-02-20
2011-11-01
Le, Thao (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C216S039000
Reexamination Certificate
active
08048798
ABSTRACT:
A method for manufacturing a nonvolatile semiconductor storage device, including: forming a first conductive layer so that it is sandwiched in an up-down direction by first insulating layers; forming a first hole so that it penetrates the first insulating layers and the first conductive layer; forming a first side wall insulating layer on a side wall facing the first hole; forming a sacrificing layer so that the sacrificing layer infills the first hole; forming a second conductive layer on an upper layer of the sacrificing layer so that the second conductive layer is sandwiched by the second insulating layer in an up-down direction; forming a second hole on a position which matches with the first hole so that the second hole penetrates the second insulating layer and the second conductive layer; forming a second side wall insulating layer on a side wall facing the second hole; removing the sacrificing layer after the formation of the second side wall insulating layer; and forming a semiconductor layer so that the semiconductor layer infills the first hole and the second hole after the removal of the sacrificing layer.
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Aochi Hideaki
Fukuzumi Yoshiaki
Ishiduki Megumi
Katsumata Ryota
Kidoh Masaru
Kabushiki Kaisha Toshiba
Le Thao
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Parker Allen
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